? semiconductor components industries, llc, 2013 september, 2013 ? rev. 0 1 publication order number: ngtb15n135ihr/d NGTB15N135IHRWG igbt with monolithic free wheeling diode this insulated gate bipolar transistor (igbt) features a robust and cost effective field stop (fs) trench construction, and provides superior performance in demanding switching applications, offering both low on ? state voltage and minimal switching loss. the igbt is well suited for resonant or soft switching applications. features ? extremely efficient trench with fieldstop technology ? 1350 v breakdown voltage ? optimized for low case temperature in ih cooker application ? reliable and cost effective single die solution ? these are pb ? free devices typical applications ? inductive heating ? consumer appliances ? soft switching absolute maximum ratings rating symbol value unit collector ? emitter voltage v ces 1350 v collector current @ t c = 25 c @ t c = 100 c i c 30 15 a pulsed collector current, t pulse limited by t jmax i cm 60 a diode forward current @ t c = 25 c @ t c = 100 c i f 30 15 a diode pulsed current, t pulse limited by t jmax i fm 60 a gate ? emitter voltage transient gate ? emitter voltage (t pulse = 5 s, d < 0.10) v ge 20 25 v power dissipation @ t c = 25 c @ t c = 100 c p d 357 178 w operating junction temperature range t j ? 40 to +175 c storage temperature range t stg ? 55 to +175 c lead temperature for soldering, 1/8? from case for 5 seconds t sld 260 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. to ? 247 case 340al c g 15 a, 1350 v v cesat = 2.15 v e off = 0.42 mj e device package shipping ordering information NGTB15N135IHRWG to ? 247 (pb ? free) 30 units / rail http://onsemi.com a = assembly location y = year ww = work week g = pb ? free package marking diagram 15n135ihr aywwg g e c
NGTB15N135IHRWG http://onsemi.com 2 thermal characteristics rating symbol value unit thermal resistance junction ? to ? case r jc 0.42 c/w thermal resistance junction ? to ? ambient r ja 40 c/w electrical characteristics (t j = 25 c unless otherwise specified) parameter test conditions symbol min typ max unit static characteristic collector ? emitter breakdown voltage, gate ? emitter short ? circuited v ge = 0 v, i c = 500 a v (br)ces 1350 ? ? v collector ? emitter saturation voltage v ge = 15 v, i c = 15 a v ge = 15 v, i c = 15 a, t j = 175 c v cesat ? ? 2.15 2.25 2.65 ? v gate ? emitter threshold voltage v ge = v ce , i c = 250 a v ge(th) 4.5 5.5 6.5 v collector ? emitter cut ? off current, gate ? emitter short ? circuited v ge = 0 v, v ce = 1350 v i ces ? ? 0.1 ma gate leakage current, collector ? emitter short ? circuited v ge = 20 v, v ce = 0 v i ges ? ? 100 na dynamic characteristic input capacitance v ce = 20 v, v ge = 0 v, f = 10 khz c ies ? 3560 ? pf output capacitance c oes ? 87 ? reverse transfer capacitance c res ? 68 ? gate charge total v ce = 600 v, i c = 15 a, v ge = 15 v q g ? 156 ? nc gate to emitter charge q ge ? 27 ? gate to collector charge q gc ? 70 ? switching characteristic, inductive load turn ? off delay time t j = 25 c v cc = 600 v, i c = 15 a r g = 10 v ge = 0 v/ 15v t d(off) ? 170 ? ns fall time t f ? 200 ? turn ? off switching loss e off ? 0.42 ? mj turn ? off delay time t j = 150 c v cc = 600 v, i c = 15 a r g = 10 v ge = 0 v/ 15v t d(off) ? 190 ? ns fall time t f ? 290 ? turn ? off switching loss e off ? 0.95 ? mj diode characteristic forward voltage v ge = 0 v, i f = 15 a, t j = 25 c v ge = 0 v, i f = 15 a, t j = 175 c v f ? ? 1.85 2.75 2.10 ? v
NGTB15N135IHRWG http://onsemi.com 3 typical characteristics figure 1. output characteristics figure 2. output characteristics v ce , collector ? emitter voltage (v) v ce , collector ? emitter voltage (v) 7 6 5 4 3 2 1 0 0 10 20 30 40 50 60 7 6 5 4 3 2 1 0 0 10 20 30 40 50 60 figure 3. output characteristics figure 4. typical transfer characteristics v ce , collector ? emitter voltage (v) v ge , gate ? emitter voltage (v) 7 6 5 4 3 2 1 0 0 10 20 30 40 50 60 10 8 7 4 3 2 1 0 0 10 20 30 40 50 60 figure 5. v ce(sat) vs. t j figure 6. typical capacitance t j , junction temperature ( c) v ce , collector ? emitter voltage (v) 175 125 100 75 25 0 ? 50 ? 75 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 90 70 60 50 30 20 10 0 1 10 100 1000 10,000 i c , collector current (a) i c , collector current (a) i c , collector current (a) i c , collector current (a) v ce , collector ? emitter voltage (v) c, capacitance (pf) 8 t j = 25 c 11 v ? 20 v 10 v 9 v 7 v 8 v t j = 150 c 8 v ge = 11 v ? 20 v 7 v 8 v 9 v 10 v t j = ? 40 c v ge = 11 v ? 20 v 7 v 8 v 9 v 10 v t j = 25 c t j = 150 c 56 9 11 ? 25 50 150 200 i c = 30 a i c = 15 a i c = 5 a t j = 25 c 40 80 100 c ies c oes c res 8
NGTB15N135IHRWG http://onsemi.com 4 typical characteristics figure 7. diode forward characteristics figure 8. typical gate charge v f , forward voltage (v) q g , gate charge (nc) 3.0 2.5 2.0 1.5 1.0 0.5 0 0 10 20 30 40 50 60 70 180 140 120 100 60 40 20 0 0 2 4 6 10 12 14 16 figure 9. switching loss vs. temperature figure 10. switching time vs. temperature t j , junction temperature ( c) t j , junction temperature ( c) 140 120 100 80 60 40 20 0 0 0.2 0.4 0.6 0.8 1.0 1.2 140 120 100 80 60 40 20 0 100 1000 figure 11. switching loss vs. i c figure 12. switching time vs. i c i c , collector current (a) i c , collector current (a) 40 35 30 20 15 10 5 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 40 35 30 25 15 10 5 0 100 1000 i f , forward current (a) v ge , gate ? emitter voltage (v) switching loss (mj) switching time (ns) switching loss (mj) switching time (ns) t j = 25 c t j = 150 c 80 160 200 8 v ce = 600 v v ge = 15 v i c = 15 a 160 v ce = 600 v v ge = 15 v i c = 15 a rg = 10 e off v ce = 600 v v ge = 15 v i c = 15 a rg = 10 160 t d(off) t f v ce = 600 v v ge = 15 v t j = 150 c rg = 10 e off 25 45 v ce = 600 v v ge = 15 v t j = 150 c rg = 10 20 45 t d(off) t f
NGTB15N135IHRWG http://onsemi.com 5 typical characteristics t d(off) e off figure 13. switching loss vs. rg figure 14. switching time vs. rg rg, gate resistor ( ) rg, gate resistor ( ) 75 65 55 45 35 25 15 5 1.2 75 65 55 45 35 25 15 5 100 1000 figure 15. switching loss vs. v ce figure 16. switching time vs. v ce v ce , collector ? emitter voltage (v) v ce , collector ? emitter voltage (v) 800 700 650 600 500 450 400 350 0 0.2 0.4 0.6 0.8 1.0 1.2 800 750 700 650 550 500 450 350 100 1000 figure 17. safe operating area figure 18. i c vs. v ce v ce , collector ? emitter voltage (v) v ce , collector ? emitter voltage (v) 1000 100 10 1 0.01 0.1 1 10 100 1000 10,000 1000 100 10 1 1 10 100 1000 switching loss (mj) switching time (ns) switching loss (mj) switching time (ns) i c , collector current (a) i c , collector current (a) v ce = 600 v v ge = 15 v t j = 150 c i c = 15 a 85 e off v ce = 600 v v ge = 15 v t j = 150 c i c = 15 a 85 t d(off) t f v ge = 15 v t j = 150 c i c = 15 a rg = 10 550 750 v ge = 15 v t j = 150 c i c = 15 a rg = 10 600 400 t f dc operation 1 ms 50 s 100 s single nonrepetitive pulse t c = 25 c curves must be derated linearly with increase in temperature v ge = 15 v t c = 125 c 1.1 0.8 0.6 0.4 0.2 0
NGTB15N135IHRWG http://onsemi.com 6 typical characteristics 70 0.01 frequency (khz) ipk (a) 0.1 1 10 100 1000 figure 19. collector current vs. switching frequency t c = 110 c t c = 80 c 60 50 40 30 20 10 0 v ce = 600 v, t j 175 c, r gate = 10 , v ge = 0/15 v, t case = 80 c or 110 c (as noted), d = 0.5 1750 ? 40 t j , junction temperature ( c) v (br)ces (v) figure 20. typical v (br)ces vs. temperature 135 110 85 60 35 10 ? 15 1700 1650 1600 1550 1500 1450 1400 1350 figure 21. igbt transient thermal impedance on ? pulse width (s) 0.1 0.001 0.0001 0.01 0.00001 1 0.000001 0.0001 0.001 0.01 0.1 1 r(t), square ? wave peak ( c/w) duty factor = t 1 /t 2 peak t j = p dm x z jc + t c r jc = 0.419 50% duty cycle single pulse 20% 10% 5% 2%
NGTB15N135IHRWG http://onsemi.com 7 figure 22. test circuit for switching characteristics
NGTB15N135IHRWG http://onsemi.com 8 figure 23. definition of turn on waveform
NGTB15N135IHRWG http://onsemi.com 9 figure 24. definition of turn off waveform
NGTB15N135IHRWG http://onsemi.com 10 package dimensions to ? 247 case 340al issue a e2 l1 d l b4 b2 b e 0.25 m ba m c a1 a 123 b e 2x 3x 0.635 m ba m a s p seating plane notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. slot required, notch may be rounded. 4. dimensions d and e do not include mold flash. mold flash shall not exceed 0.13 per side. these dimensions are measured at the outermost extreme of the plastic body. 5. lead finish is uncontrolled in the region defined by l1. 6. ? p shall have a maximum draft angle of 1.5 to the top of the part with a maximum diameter of 3.91. 7. dimension a1 to be measured in the region defined by l1. dim min max millimeters d 20.30 21.40 e 15.50 16.25 a 4.70 5.30 b 1.00 1.40 b2 1.65 2.35 e 5.45 bsc a1 2.20 2.60 c 0.40 0.80 l 19.80 20.80 q 5.40 6.20 e2 4.32 5.49 l1 3.50 4.50 p 3.55 3.65 s 6.15 bsc b4 2.60 3.40 note 6 4 note 7 q note 4 note 3 note 5 e2/2 note 4 on semiconductor and are registered trademarks of semiconductor co mponents industries, llc (scillc). scillc owns the rights to a numb er of patents, trademarks, copyrights, trade secrets, and other inte llectual property. a listing of scillc?s pr oduct/patent coverage may be accessed at ww w.onsemi.com/site/pdf/patent ? marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typical s? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or a uthorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in whic h the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or us e scillc products for any such unintended or unauthorized appli cation, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unin tended or unauthorized use, even if such claim alleges that scil lc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyrig ht laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 ngtb15n135ihr/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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